Solid-State RF Power Amplifiers for ISM CW Applications Based on 100 V GaN Technology

被引：0

作者：

Formicone, Gabriele ^{[1
]}

Burger, Jeff ^{[1
]}

Custer, James ^{[1
]}

Bosi, Gianni ^{[2
]}

Raffo, Antonio ^{[2
]}

Vannini, Giorgio ^{[2
]}

机构：

[1] Integra Technol Inc, 321 Coral Circle, El Segundo, CA 90245 USA

[2] Univ Ferrara, Dept Engn, I-44122 Ferrara, Italy

来源：

2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年

关键词：

accelerator; amplifier; high efficiency; GaN transistor; microwave; sintering;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias operation in UHF band with GaN devices which have the potential of achieving >70% efficiency at kilowatt power level by properly designing and sizing the active devices. Microwave sintering, particle accelerators and magnetic resonance imaging equipment at UHF or L-band are the most likely beneficiary of the technology introduced in this paper.

引用

页码：33 / 36

页数：4

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