Simulation of phosphorus, arsenic or antimony ion implantation in silicon targets

被引：0
|
作者：
Labbani, R. [1 ]
机构：
[1] Univ Mentouri Constantine, Fac Sci Exactes, Dept Phys, Lab Couches Minces & Interfaces, Constantine 25000, Algeria
来源：
SURFACE AND INTERFACE ANALYSIS | 2010年 / 42卷 / 6-7期
关键词：
ion implantation; silicon; simulation;
D O I：
10.1002/sia.3226
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The aim of this work was to study the behaviors of P+, As+ and Sb+ ions implanted in silicon targets. The investigation was mainly performed by simulation using the SRIM2006 (stopping and range of ions in matter) program. Several quantities, such as the depth profiles of the ion concentration, stopping powers and radiation damage, were predicted. Besides, an experimental study was carried out particularly for the case of Sb+ ions. The antimony ion implantation was performed to a dose of 5 x 10(15) Sb+ cm(-2) at 120 keV energy into an Si(100) target. The samples were analyzed by means of Rutherford backscattering spectroscopy (RBS) using He+ particles. A discrepancy between the experimental and simulated antimony depth profiles was revealed. In the case of phosphorus and arsenic, the simulated projected ranges (Rps) were compared with literature values and good agreement has been obtained. Finally, it is necessary to note that the predictions of some effects related to ion implantation (annealing temperature, crystallographic orientation of the targets, multi-implantations, etc.) are not possible via the SRIM code. Copyright (C) 2010 John Wiley & Sons, Ltd.
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页码：1114 / 1117
页数：4
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