Fracture strength of silicon wafer after different wafer treatment methods

被引：0

作者：

Zhou Linfeng ^{[1
]}

Qin Fei ^{[1
]}

Sun Jinglong ^{[1
]}

Chen Pei ^{[1
]}

Yu Huiping ^{[1
]}

Wang Zhongkang ^{[2
]}

Tang Liang ^{[2
]}

机构：

[1] Beijing Univ Technol, Coll Mech Engn & Appl Elect Technol, Beijing, Peoples R China

[2] CETE Beijing Elect Equipment Co Ltd, Beijing, Peoples R China

来源：

2015 16TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY | 2015年

关键词：

silicon wafer; three-point bending test; fracture strength; DIES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the increase of wafer diameter and the reduction of wafer thickness, the fracture strength of silicon wafer decreases dramatically, which has drawn much more attention in recent years. Three-point bending test is a frequently cited method used to measure the fracture strength of silicon wafer, and the measured strength is sensitive to the edge defect caused by dicing. This paper proposes a grinding and polishing wafer treatment method to eliminate the defect along the sample edges. And the fracture strength of the treated and the untreated samples are compared in this study. The result shows that the fracture strength of the treated samples is much higher than those of the untreated.

引用

页数：4

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