Hydrogen annealed silicon wafer

被引：9
|
作者：
Nadahara, S
Kubota, H
Samata, S
机构：
[1] Toshiba Co Ltd, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 235, Japan
[2] Toshiba Co Ltd, Dept Semicond Mat Engn, Saiwai Ku, Kawasaki, Kanagawa 210, Japan
来源：
SOLID STATE PHENOMENA | 1997年 / 57-8卷
关键词：
hydrogen annealing; high temperature annealing; Si; oxygen out-diffusion; COP; BMD; oxide breakdown;
D O I：
10.4028/www.scientific.net/SSP.57-58.19
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High temperature, hydrogen annealing technology produces high quality substrate for ULSI manufacturing. The elimination of grow-in and process-induced defects near surface, and oxygen precipitation control in the bulk by high temperature, hydrogen annealing are reviewed in compared with conventional CZ, slow-pulling CZ, and conventional DZ-IG wafers.
引用
收藏
页码：19 / 26
页数：8
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