Dual Active-Feedback Frequency Compensation for Output-Capacitorless LDO With Transient and Stability Enhancement in 65-nm CMOS

被引:75
|
作者
Li, Guangxiang [1 ,2 ]
Qian, Huimin [1 ]
Guo, Jianping [1 ]
Mo, Bing [1 ,3 ,4 ]
Lu, Yan [5 ]
Chen, Dihu [1 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China
[2] Renesas Elect Amer Inc, Bridgewater, NJ 08807 USA
[3] Nanjing Univ Sci & Technol, Nanjing 210094, Peoples R China
[4] Silicon Shenzhen Elect Technol Co Ltd, Shenzhen 518000, Peoples R China
[5] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau, Peoples R China
基金
中国国家自然科学基金;
关键词
Capacitorless; dual active-feedback frequency compensation (DAFFC); low-dropout regulator (LDO); stability; telescopic cascode output stage; LOW-DROPOUT REGULATOR; LOW-QUIESCENT CURRENT; HIGH PSR; AMPLIFIER; VOLTAGE;
D O I
10.1109/TPEL.2019.2910557
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An output-capacitorless low-dropout regulator (OCL-LDO) using a dual-active feedback frequency compensation (DAFFC) scheme with both transient and stability enhancement has been presented in this paper. The DAFFC scheme consists of two parallel active feedback paths, which creates two pole-zero pairs to effectively enhance the stability and transient response for the proposed OCL-LDO. Compared to the conventional single-path active-feedback frequency compensation method, the proposed DAFFC technique has provided one more design freedom with one more active feedback loop deployed and has been proved to be capable of obtaining better compensation effects with the same capacitor budget. Besides, the induced extra ac currents by the two active feedback loops have also enhanced the transient response of the proposed OCL-LDO. To substantiate the proposed DAFFC, a telescopic cascode output stage for error amplifier, and two on-chip compensation capacitors (5 and 1 pF, respectively) are needed. The proposed OCL-LDO has been implemented in 65-nm CMOS technology and the active chip area is 0.0105 mm(2). The output voltage is 0.8 V, and the minimum input voltage is 0.95 V at 100-mA loading current. The proposed OCL-LDO can work stably in a load range of 0 to 100 mA with 14-mu A quiescent current.
引用
收藏
页码:415 / 429
页数:15
相关论文
共 48 条
  • [31] 160-310 GHz Frequency Doubler in 65-nm CMOS with 3-dBm Peak Output Power for Rotational Spectroscopy
    Sharma, Navneet
    Choi, Wooyeol
    Kenneth, K. O.
    2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 186 - 189
  • [32] A Dual-Output Switched Capacitor DC-DC Buck Converter Using Adaptive Time Multiplexing Technique in 65-nm CMOS
    Kilani, Dima
    Mohammad, Baker
    Alhawari, Mohammad
    Saleh, Hani
    Ismail, Mohammed
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2018, 65 (11) : 4007 - 4016
  • [33] A 0.3 THz Radiating Active x27 Frequency Multiplier Chain With 1 mW Radiated Power in CMOS 65-nm
    Jameson, Samuel
    Socher, Eran
    IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2015, 5 (04) : 645 - 648
  • [34] A Fast-Transient Output Capacitor-Less Low-Dropout Regulator Using Active-Feedback and Current-Reuse Feedforward Compensation
    Sung, Eun-Taek
    Park, Sangyong
    Baek, Donghyun
    ENERGIES, 2018, 11 (03):
  • [35] Low-Power and High-Linearity Inductorless Low-Noise Amplifiers with Active-Shunt-Feedback in 65-nm CMOS Technology
    Inoue, Toshiyuki
    Noguchi, Ryosuke
    Tsuchiya, Akira
    Kishine, Keiji
    Onodera, Hidetoshi
    2018 IEEE 61ST INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2018, : 751 - 754
  • [36] A Fast-Transient 500-mA Digitally Assisted Analog LDO With 30-μ V/mA Load Regulation and 0.0073-ps FoM in 65-nm CMOS
    Chen, Feng
    Lu, Yasu
    Mok, Philip K. T.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (02) : 511 - 520
  • [37] A W-Band Divide-by-Three Injection-Locked Frequency Divider With Injection Current Boosting Utilizing Inductive Feedback in 65-nm CMOS
    Nam, Hyohyun
    Park, Jung-Dong
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2020, 30 (05) : 516 - 519
  • [38] A 201-and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency $G_{\max }$-Core With Dual-Band Matching
    Park, Dae-Woong
    Yun, Byeonghun
    Utomo, Dzuhri Radityo
    Hong, Jong-Phil
    Lee, Sang-Gug
    IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2023, 13 (03) : 221 - 230
  • [39] A 1 A, Dual-Inductor 4-Output Buck Converter With 20 MHz/100 MHz Dual-Frequency Switching and Integrated Output Filters in 65 nm CMOS
    Jiang, Yongjie
    Fayed, Ayman
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (10) : 2485 - 2500
  • [40] A 0.6-1V Input Capacitor-Less Asynchronous Digital LDO with Fast Transient Response Achieving 9.5b over 500mA Loading Range in 65-nm CMOS
    Yang, Fan
    Mok, Philip K. T.
    ESSCIRC CONFERENCE 2015 - 41ST EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC), 2015, : 180 - 183