Broad area semiconductor lasers with Gaussian-like current distribution - art. no. 682415

被引：0

作者：

Zhongliang Qiao ^{[1
]}

Jing Zhang ^{[1
]}

Chunling Liu ^{[1
]}

Yanping Yao ^{[1
]}

Huang Bo ^{[1
]}

Jianli Ma ^{[1
]}

Xin Gao ^{[1
]}

Baoxue Bo ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

来源：

SEMICONDUCTOR LASERS AND APPLICATIONS III | 2008年 / 6824卷

关键词：

broad area semiconductor lasers; near limited diffraction; photon gain; beam quality factor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

According to the principle of carrier diffusion within injection stripe, we fabricated a new type of high power single quantum well broad area semiconductor laser. The designed device has a special current injection stripe which results in a Gaussian-like photon gain laterally. The output power is up to 3.75 watt when the beam quality factor M-2 is 10.6 in continuous-wave operation, and the beam quality factor M-2 is 5.4 when the output power is 2.5 watt at the same operation condition. The beam quality of broad area semiconductor single quantum well laser has been improved obviously by the designed device.

引用

页码：82415 / 82415

页数：7

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