Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F

被引：0

作者：

Xu, Y ^{[1
]}

Li, YZ ^{[1
]}

Song, GF ^{[1
]}

Gan, QQ ^{[1
]}

Cao, Q ^{[1
]}

Guo, L ^{[1
]}

Chen, LH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

Optoelectronic Materials and Devices for Optical Communications | 2005年 / 6020卷

关键词：

AIGaInP laser diodes; leakage current; electrical derivative;

D O I：

10.1117/12.636130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

引用

页码：F202 / F202

页数：4

共 8 条

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Peng Shichun
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