Single lateral mode broad area laser diodes by thermally profiled lateral refractive index: Modeling and simulation - art. no. 61151U

被引：0

作者：

Mukherjee, Jayanta ^{[1
]}

McInerney, John G. ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Optoelect Grp, Dept Phys, Cork, Ireland

来源：

Physics and SImulation of Optoelectronic Devices XIV | 2006年 / 6115卷

关键词：

broad area lasers; thermal simulation; FFT BPM; lateral mode selection; index profiling; finite element;

D O I：

10.1117/12.639927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose and demonstrate theoretically a method of achieving single lateral mode field patterns in CW broad area laser diodes at high power. The method relies on laterally profiling the thermal conductivity of the bonding solder layer and thereby thermally controlling the lateral index. Various configurations are simulated using a split step FFT beam propagation method including thermal, carrier (alpha-parameter) and optical (Kerr effect) index variations. Thermal effects are described using a 2-D finite element electro-thermal model including current spreading.

引用

页码：U1151 / U1151

页数：11