A NOVEL METHODOLOGY TO MONITOR WAFER PLACEMENT SHIFT IN LASER SPIKE ANNEAL

被引：0

作者：

Gui, Yan ^{[1
]}

Jiang, Lan ^{[1
]}

Shen, Yaoting ^{[1
]}

Dong, Qingwei ^{[1
]}

Chen, Kecheng ^{[1
]}

Cheng, Xinhua ^{[1
]}

Fang, Jingxun ^{[1
]}

机构：

[1] Shanghai Huali Integrated Circuit Corp, Shanghai 201314, Peoples R China

来源：

2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年

关键词：

laser anneal; placement shift; fluctuation range control;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

For advanced technology node, laser anneal is widely used for ultra-shallow and low resistivity junctions which are needed to suppress short-channel effects and improve device performance. However, if wafer is not put in proper position, laser anneal will lead to PP source drain photo overlay residual abnormal, and even cause wafer broken. In this paper, a novel methodology is evaluated to earlier alert wafer placement shift in laser anneal which including measuring first laser scan region Rs fluctuation range control to detect the abnormal temperature spot combining with monitor camera installation, by this method wafer broken ratio is significantly reduced and productivity is improved eventually.

引用

页数：3

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