Synthesis of carbon nanowalls by hot-wire chemical vapor deposition

被引:25
|
作者
Itoh, Takashi [1 ]
机构
[1] Gifu Univ, Gifu 5011193, Japan
关键词
Carbon nanowall; Hot-wire CVD; Graphene; Hydrogen radical; Substrate surface temperature; DIAMOND; GROWTH; FILMS; CVD;
D O I
10.1016/j.tsf.2011.01.308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Carbon nanowall (CNW) is a carbon nano-material which has a wall structure that stood on substrates. CNWs can be synthesized by hot-wire chemical vapor deposition (HWCVD) using methane without hydrogen dilution. The synthesis of CNWs by HWCVD is discussed along with reviewing the experimental results. The growth of CNWs is affected by hydrogen dilution ratio and substrate surface temperature. Based on these results, it is suggested that hydrogen radical density and substrate surface temperature are the important parameters for the synthesis of CNWs. The growth process of CNWs is also discussed. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:4589 / 4593
页数:5
相关论文
共 50 条
  • [41] Hot-wire chemical vapor deposition of silicon from silane: Effect of process conditions
    Pant, A
    Russell, TWF
    Huff, MC
    Aparicio, R
    Birkmire, RW
    INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 2001, 40 (05) : 1377 - 1385
  • [42] Optical and electronic properties of microcrystalline silicon deposited by hot-wire chemical vapor deposition
    Han, DX
    Habuchi, H
    Hori, T
    Nishibe, A
    Namioka, T
    Lin, J
    Yue, GZ
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 274 - 278
  • [43] Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition
    Stannowski, B
    Rath, JK
    Schropp, REI
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2618 - 2625
  • [44] Growth orientation of poly-Si film by hot-wire chemical vapor deposition
    Chai, Zhan
    Zhang, Guifeng
    Wang, Sai
    Hou, Xiaoduo
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2007, 27 (01): : 76 - 79
  • [45] The aging of tungsten filaments and its effect on wire surface kinetics in hot-wire chemical vapor deposition
    Holt, JK
    Swiatek, M
    Goodwin, DG
    Atwater, HA
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4803 - 4808
  • [46] Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers
    Teplin, Charles W.
    Martin, Ina T.
    Jones, Kim M.
    Young, David
    Romero, Manuel J.
    Reedy, Robert C.
    Branz, Howard M.
    Stradins, Paul
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008, 2008, 1066 : 285 - 289
  • [47] Hot-wire chemical vapor deposition of crystalline tungsten oxide nanoparticles at high density
    Mahan, AH
    Parilla, PA
    Jones, KM
    Dillon, AC
    CHEMICAL PHYSICS LETTERS, 2005, 413 (1-3) : 88 - 94
  • [48] Stress measurements in polycrystalline silicon films grown by hot-wire chemical vapor deposition
    Peiro, D
    Bertomeu, J
    Arrando, F
    Andreu, J
    MATERIALS LETTERS, 1997, 30 (2-3) : 239 - 243
  • [49] Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates
    Freire Soler, Victor-Manuel
    Badia-Canal, Jordi
    Corbella Roca, Carles
    Pascual Miralles, Esther
    Bertran Serra, Enric
    Andujar Bella, Jose-Luis
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (01)
  • [50] Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition
    Thiesen, J
    Iwaniczko, E
    Jones, KM
    Mahan, A
    Crandall, R
    APPLIED PHYSICS LETTERS, 1999, 75 (07) : 992 - 994