Thermal management of lateral GaN power devices

被引：0

作者：

Yu, Chenjiang ^{[1
]}

Laboure, Eric ^{[1
]}

Buttay, Cyril ^{[2
]}

机构：

[1] UPMC, Univ Paris 11, Cent Supelec, Lab GEEPS,UMR 8507, 11 Rue Joliot Curie, FR-91192 Gif Sur Yvette, France

[2] Univ Lyon, CNRS, INSA Lyon, Lab Ampere,UMR 5005, F-69621 Villeurbanne, France

来源：

2015 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP) | 2015年

关键词：

GaN power device; thermal management; Flex circuit; 3D packaging; flip-chip;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article investigates several thermal management techniques for GaN transistors with a Wafer-Level Packaging (WLP): advanced techniques are used to mount them on Direct-Bonded Copper (DBC) ceramic substrates, with the heat removed either through the topside of the die (as recommended by the manufacturer), or through the backside. The thermal resistance of the assembly is measured in the different configurations, for different die thicknesses. The paper describes the manufacturing process and the thermal simulation and experimental results will be shown.

引用

页码：40 / 43

页数：4

共 50 条

[1] Thermal Management for GaN Power Devices Mounted on PCB Substrates
Zhang, Shuangfeng
Laboure, Eric
Labrousse, Denis
Lefebvre, Stephane
[J]. 2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP), 2017,
[2] Advanced Packaging and Thermal Management for High Power Density GaN Devices
Zhao, Yuan
Semenic, Tadej
Bhunia, Avijit
[J]. 2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
[3] Vertical and lateral GaN power devices enabled by engineered GaN substrates
Luna, Lunet E.
Anderson, Travis J.
Koehler, Andrew D.
Tadjer, Marko J.
Aktas, Ozgur
Hobart, Karl D.
Kub, Fritz J.
[J]. STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 61 (SOTAPOCS 61) -AND - LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 11, 2018, 86 (09): : 3 - 8
[4] Voltage Switching Limits of Lateral GaN Power Devices
Shenai, Krishna
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 179 - 184
[5] Fast and Distributed Thermal Model for Thermal Modeling of GaN Power Devices
Sodan, V.
Stoffels, S.
Oprins, H.
Decoutere, S.
Altmann, F.
Baelmans, M.
De Wolf, I.
[J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2018, 8 (10): : 1747 - 1755
[6] GaN Power Transistors with Integrated Thermal Management
Eddy, C. R., Jr.
Anderson, T. J.
Koehler, A. D.
Nepal, N.
Meyer, D. J.
Tadjer, M. J.
Baranyai, R.
Pomeroy, J. W.
Kuball, M.
Feygelson, T. I.
Pate, B. B.
Mastro, M. A.
Hite, J. K.
Ancona, M. G.
Kub, F. J.
Hobart, K. D.
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 279 - 286
[7] In Depth Thermal Analysis of Packaged GaN on Si Power Devices
Wang, Chieh-An
Chou, Hsin-Ping
Cheng, Stone
Chou, Po-Chien
[J]. 2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 101 - 104
[8] Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices
Manandhar, Mahesh B.
Matin, Mohammad A.
[J]. JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS, 2021, 11 (03)
[9] Joint Power and Thermal Management for Implantable Devices
Chai, Ruizhi
Zhang, Ying
Ghovanloo, Maysam
[J]. 2015 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS), 2015, : 65 - 68
[10] Thermal management of an integrated power module with multiple power devices
Ganesa-Pillai, M
Chen, Q
[J]. INTELEC(R): TWENTY-SECOND INTERNATIONAL TELECOMMUNICATIONS ENERGY CONFERENCE, 2000, : 245 - 251

← 1 2 3 4 5 →