Deep level transient spectroscopy of vertically stacked InAs self-assembled quantum dots

被引：0
|
作者：
Li, SW [1 ]
Koike, K [1 ]
Sasa, S [1 ]
Inoue, M [1 ]
Yano, M [1 ]
机构：
[1] Osaka Inst Technol, New Mat Res Ctr, Asahi Ku, Osaka 5358585, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The discrete energy level properties of self-assembled vertically stacked InAs quantum dots (QDs) in Al0.5Ga0.5As are studied by means of deep level transient spectroscopy (DLTS) and photolunimescence (PL) spectroscopy. DLTS measurement displays the spectra of hole and electron discrete energy levels as positive and negative peaks. The concentration of thermally ionized electrons and holes from the QDs is large enough to mask the signals from deep levels in the matrix. PL emission peaks are found to completely correspond to the DLTS signals.
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页码：1289 / 1290
页数：2
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