Deep level transient spectroscopy of vertically stacked InAs self-assembled quantum dots

被引：0
|
作者：
Li, SW [1 ]
Koike, K [1 ]
Sasa, S [1 ]
Inoue, M [1 ]
Yano, M [1 ]
机构：
[1] Osaka Inst Technol, New Mat Res Ctr, Asahi Ku, Osaka 5358585, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The discrete energy level properties of self-assembled vertically stacked InAs quantum dots (QDs) in Al0.5Ga0.5As are studied by means of deep level transient spectroscopy (DLTS) and photolunimescence (PL) spectroscopy. DLTS measurement displays the spectra of hole and electron discrete energy levels as positive and negative peaks. The concentration of thermally ionized electrons and holes from the QDs is large enough to mask the signals from deep levels in the matrix. PL emission peaks are found to completely correspond to the DLTS signals.
引用
收藏
页码：1289 / 1290
页数：2
相关论文
共 50 条
  • [21] Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots
    Lee, CY
    Song, JD
    Lee, YT
    Kim, TW
    SOLID STATE COMMUNICATIONS, 2003, 126 (07) : 421 - 424
  • [22] Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots
    Kim, J.H.
    Woo, J.T.
    Kim, T.W.
    Yoo, K.H.
    Lee, Y.T.
    Journal of Applied Physics, 2006, 100 (06):
  • [23] Raman spectroscopy characterization of InAs self-assembled quantum dots
    Galzerani, JC
    Pusep, YA
    PHYSICA B-CONDENSED MATTER, 2002, 316 : 455 - 458
  • [24] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Itskevich, IE
    Parnell, SR
    Finley, JJ
    Wilson, LR
    Schumacher, KL
    Mowbray, DJ
    Skolnick, MS
    Al-Khafaji, M
    Cullis, AG
    Hopkinson, M
    Clark, JC
    Hill, G
    PHYSICAL REVIEW B, 2000, 62 (24) : 16784 - 16791
  • [25] Absorption spectroscopy of single InAs self-assembled quantum dots
    Alèn, B
    Karrai, K
    Warburton, RJ
    Bickel, F
    Petroff, PM
    Martínez-Pastor, J
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 395 - 399
  • [26] Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots
    Kim, J. H.
    Woo, J. T.
    Kim, T. W.
    Yoo, K. H.
    Lee, Y. T.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
  • [27] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Mowbray, DJ
    Itskevich, IE
    Skolnick, MS
    Barker, JA
    O'Reilly, EP
    Hopkinson, M
    Al-Khafaji, M
    David, JPR
    Cullis, AG
    Hill, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 497 - 502
  • [28] Magnetotunnelling and photoluminescence spectroscopy of self-assembled InAs quantum dots
    Itskevich, IE
    Ihn, T
    Thornton, A
    Henini, M
    Carmona, HD
    Eaves, L
    Main, PC
    Maude, DK
    Portal, JC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4073 - 4077
  • [29] Deep level transient spectroscopy, photoreflection and time resolved photoluminescence spectra of self-assembled quantum dots
    Bala, W
    ICTON 2001: 3RD INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, CONFERENCE PROCEEDINGS, 2001, : 63 - 63
  • [30] Deep level transient capacitance measurements of GaSb self-assembled quantum dots
    1600, American Institute of Physics Inc. (88):
12345