A 4.2 mW 50 MS/s 13 bit CMOS SAR ADC With SNR and SFDR Enhancement Techniques

被引:73
|
作者
Miki, Takuji [1 ]
Morie, Takashi [2 ]
Matsukawa, Kazuo [1 ]
Bando, Yoji [2 ]
Okumoto, Takeshi [2 ]
Obata, Koji [1 ]
Sakiyama, Shiro [1 ]
Dosho, Shiro [1 ]
机构
[1] Panasonic Corp, Osaka 5708501, Japan
[2] Panasonic Corp, Kyoto 6178520, Japan
关键词
ADC; CMOS; dithering; SAR; DB SNDR; QUANTIZATION; 10-BIT;
D O I
10.1109/JSSC.2015.2417803
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a SAR ADC with 71 dB SNDR and 85 dB SFDR at 50 MS/s while keeping low power consumption of 4.2 mW. To achieve high resolution without large increase of power, several SNR and SFDR enhancement techniques are proposed. Firstly, the ADC repeats comparison of LSB by using redundant DAC to average comparator noise and improve SNR. The technique also corrects settling error adaptively, which extends operation speed to 50 MHz even though extra comparison period is added for averaging. Secondly, simple filtering method for reducing DAC noise is introduced to achieve further improvement of SNR. Finally, new dithering method is proposed to enhance SFDR. Injecting noise-shaped, multi-valued and uniform-distributed dither to input of the ADC, spurs caused by capacitance mismatches of DAC can be suppressed more effectively compared with conventional dithering. These techniques can be realized by simple circuits in addition to a basic SAR ADC configuration and do not need high power consumption. The chip is fabricated in a 90 nm CMOS process and occupies 0.1 mm(2) including all correction logic. The ADC achieved a peak figure of merit (FoM) of 168.7 dB.
引用
收藏
页码:1372 / 1381
页数:10
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