A 4.2 mW 50 MS/s 13 bit CMOS SAR ADC With SNR and SFDR Enhancement Techniques

被引:73
|
作者
Miki, Takuji [1 ]
Morie, Takashi [2 ]
Matsukawa, Kazuo [1 ]
Bando, Yoji [2 ]
Okumoto, Takeshi [2 ]
Obata, Koji [1 ]
Sakiyama, Shiro [1 ]
Dosho, Shiro [1 ]
机构
[1] Panasonic Corp, Osaka 5708501, Japan
[2] Panasonic Corp, Kyoto 6178520, Japan
关键词
ADC; CMOS; dithering; SAR; DB SNDR; QUANTIZATION; 10-BIT;
D O I
10.1109/JSSC.2015.2417803
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a SAR ADC with 71 dB SNDR and 85 dB SFDR at 50 MS/s while keeping low power consumption of 4.2 mW. To achieve high resolution without large increase of power, several SNR and SFDR enhancement techniques are proposed. Firstly, the ADC repeats comparison of LSB by using redundant DAC to average comparator noise and improve SNR. The technique also corrects settling error adaptively, which extends operation speed to 50 MHz even though extra comparison period is added for averaging. Secondly, simple filtering method for reducing DAC noise is introduced to achieve further improvement of SNR. Finally, new dithering method is proposed to enhance SFDR. Injecting noise-shaped, multi-valued and uniform-distributed dither to input of the ADC, spurs caused by capacitance mismatches of DAC can be suppressed more effectively compared with conventional dithering. These techniques can be realized by simple circuits in addition to a basic SAR ADC configuration and do not need high power consumption. The chip is fabricated in a 90 nm CMOS process and occupies 0.1 mm(2) including all correction logic. The ADC achieved a peak figure of merit (FoM) of 168.7 dB.
引用
收藏
页码:1372 / 1381
页数:10
相关论文
共 50 条
  • [21] A 14-bit 80 MS/s CMOS ADC with 84.8 dB SFDR and 72 dB SNDR
    Cai, Hua
    Li, Ping
    Cen, Yuanjun
    Zhu, Zhiyong
    JOURNAL OF SEMICONDUCTORS, 2012, 33 (02)
  • [22] A 10 bit 90 MS/s SAR ADC in a 65 nm CMOS Technology
    Digel, Johannes
    Groezing, Markus
    Berroth, Manfred
    2016 IEEE 16TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2016, : 110 - 112
  • [23] An 8-bit 208 MS/s SAR ADC in 65 nm CMOS
    Zhangming Zhu
    Qiyu Wang
    Yu Xiao
    Xiaoli Song
    Yintang Yang
    Analog Integrated Circuits and Signal Processing, 2013, 76 : 129 - 137
  • [24] An 8-bit 208 MS/s SAR ADC in 65 nm CMOS
    Zhu, Zhangming
    Wang, Qiyu
    Xiao, Yu
    Song, Xiaoli
    Yang, Yintang
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2013, 76 (01) : 129 - 137
  • [25] A 13 bit 100 MS/s SAR ADC With 74.57 dB SNDR in 14-nm CMOS FinFET
    Zheng, Yan
    Ye, Fan
    Ren, Junyan
    2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
  • [26] A 10-bit 100-MS/s 5.23-mW SAR ADC in 0.18-μm CMOS
    Ma, Rui
    Wang, Lisha
    Li, Dengquan
    Ding, Ruixue
    Zhu, Zhangming
    MICROELECTRONICS JOURNAL, 2018, 78 : 63 - 72
  • [27] A 0.775mW 10-bit 40-MS/s SAR ADC in 0.18μm CMOS Process
    Yang, Wenzha
    Zhang, Yi
    Dai, Enwen
    Feng, ZhiLin
    Li, Wei
    2016 IEEE INTERNATIONAL CONFERENCE ON UBIQUITOUS WIRELESS BROADBAND (ICUWB2016), 2016,
  • [28] A 14-bit 80 MS/s CMOS ADC with 84.8 dB SFDR and 72 dB SNDR
    蔡化
    李平
    岑远军
    朱志勇
    半导体学报, 2012, 33 (02) : 127 - 132
  • [29] A Cryogenic 8-Bit 32 MS/s SAR ADC Operating down to 4.2 K
    Huang, Yajie
    Luo, Chao
    Guo, Guoping
    ELECTRONICS, 2023, 12 (06)
  • [30] A 1 mW 71.5 dB SNDR 50 MS/s 13 bit Fully Differential Ring Amplifier Based SAR-Assisted Pipeline ADC
    Lim, Yong
    Flynn, Michael P.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (12) : 2901 - 2911