Selective formation of InAs quantum dot structures grown by molecular beam epitaxy

We report on the selective formation of self-assembled quantum dots (QDs) using the {111}-facet revealed GaAs substrate and masked substrate by nano patterned Ga2O3 thin film. Using the {111}-facet revealed substrate, higher migration effect of the In atoms on the {111}-facet compared to the (100) plane enables the selective formation of InAs QDs. In the case of the masked substrate by Ga2O3 thin film, more effective and easy selective formation of self-assembled QDs could be realized. The selectivity of the QDs growth was obtained successfully using the 0.2 mu m patterned Ga2O3 layer, which resulted from the enhanced migration effect of the adsorbed In atoms on the Ga2O3 surface as well as the desorption effect.