1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy

In this Letter, we report the enhanced radiative recombination output from an AlGaAs/GaAs heterojunction bipolar transistor with InAs quantum dots embedded in the base region to form a quantum-dot light-emitting transistor (QDLET) grown by molecular beam epitaxy systems. For the device with a 100 mu m x 100 mu m emitter area, we demonstrate the dual output characteristics with an electrical output and an optical output when the device is operating in the common-emitter configuration. The quantum-dot light-emitting transistor exhibits a base recombination radiation in the near-infrared spectral range with a dominant peak at lambda of 1100 nm. (C) 2015 Optical Society of America