1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy

被引：1
|
作者：
Wu, Cheng-Han [1 ]
Chen, Hsuan-An [1 ,3 ]
Lin, Shih-Yen [1 ,3 ]
Wu, Chao-Hsin [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
来源：
OPTICS LETTERS | 2015年 / 40卷 / 16期
关键词：
HETEROJUNCTION BIPOLAR-TRANSISTORS; THRESHOLD; EMISSION; LASERS;
D O I：
10.1364/OL.40.003747
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this Letter, we report the enhanced radiative recombination output from an AlGaAs/GaAs heterojunction bipolar transistor with InAs quantum dots embedded in the base region to form a quantum-dot light-emitting transistor (QDLET) grown by molecular beam epitaxy systems. For the device with a 100 mu m x 100 mu m emitter area, we demonstrate the dual output characteristics with an electrical output and an optical output when the device is operating in the common-emitter configuration. The quantum-dot light-emitting transistor exhibits a base recombination radiation in the near-infrared spectral range with a dominant peak at lambda of 1100 nm. (C) 2015 Optical Society of America
引用
收藏
页码：3747 / 3749
页数：3
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