1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy

被引：1

作者：

Wu, Cheng-Han ^{[1
]}

Chen, Hsuan-An ^{[1
,3
]}

Lin, Shih-Yen ^{[1
,3
]}

Wu, Chao-Hsin ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

OPTICS LETTERS | 2015年 / 40卷 / 16期

关键词：

HETEROJUNCTION BIPOLAR-TRANSISTORS; THRESHOLD; EMISSION; LASERS;

D O I：

10.1364/OL.40.003747

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this Letter, we report the enhanced radiative recombination output from an AlGaAs/GaAs heterojunction bipolar transistor with InAs quantum dots embedded in the base region to form a quantum-dot light-emitting transistor (QDLET) grown by molecular beam epitaxy systems. For the device with a 100 mu m x 100 mu m emitter area, we demonstrate the dual output characteristics with an electrical output and an optical output when the device is operating in the common-emitter configuration. The quantum-dot light-emitting transistor exhibits a base recombination radiation in the near-infrared spectral range with a dominant peak at lambda of 1100 nm. (C) 2015 Optical Society of America

引用

页码：3747 / 3749

页数：3

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