InAs/GaAs quantum dot lasers with GaP strain-compensation layers grown by molecular beam epitaxy

被引：9
|
作者：
Kageyama, Takeo [1 ]
Watanabe, Katsuyuki [2 ]
Quoc Huy Vo [2 ]
Takemasa, Keizo [3 ]
Sugawara, Mitsuru [3 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[3] QD Laser Inc, Kawasaki Ku, Keihin Bldg 1F,1-1 Minamiwataridacho, Kawasaki, Kanagawa 2100855, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 04期
关键词：
molecular beam epitaxy; quantum dots; semiconductor lasers; strain compensation; MODULATION RESPONSE; WELL LASERS; MU-M; GAASP; INAS;
D O I：
10.1002/pssa.201532555
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The strain-compensation (SC) technique to reduce the accumulation of strain is a promising approach to increase the design flexibility as well as the performance of quantum dot (QD) lasers. Here we have studied the application of tensile-strained ultra-thin GaP layers into multiple stacked InAs/GaAs QD grown by MBE. XRD analysis shows the controllability of the average strain in multiple-stacked QD active layer, revealing a reduction in accumulated strain. Fabricated QD laser diodes including thinner QD active layers realized by SC technology show a narrower vertical far-field angle and an increased small signal modulation bandwidth without loss of gain. Cross-sectional SEM image of SC-QD LD active region
引用
收藏
页码：958 / 964
页数：7
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