Development of a SPICE modelling strategy for power devices in GaN technology

被引：2

作者：

Bottaro, Enrico ^{[1
]}

Cacciato, Mario ^{[1
]}

Raffa, Alessandra ^{[2
]}

Rizzo, Santi Agatino ^{[1
]}

Salerno, Nunzio ^{[1
]}

Veneziano, Pier Paolo ^{[2
]}

机构：

[1] Univ Catania, Catania, Italy

[2] STMicroelectronics, Catania, Italy

来源：

IECON 2021 - 47TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2021年

关键词：

Galium nitride (GaN); GaN HEMT; behavioural modelling; static characteristics; power device; temperature-dependent; SIC MOSFET; PARAMETERS;

D O I：

10.1109/IECON48115.2021.9589710

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a behavioral static model of GaN HEMT is proposed. Different mathematical formulas have been tested to find the best for emulating the static behaviour of a 650V GaN HEMT prototype manufactured by STMicroelectronics. In literature, almost all the proposed formulas did not satisfy the target characteristics. The study of the new mathematical formulas, proposed in this paper, starts from the analysis of the models present in the literature that are rewritten and adapted for this model. Furthermore, these new equations are temperature dependent. The simulated curves of the static characteristics have been compared with those extracted by means of laboratory measurements. The model has been developed exploiting some features of STMicroelectronics models of SiC power MOSFETs.

引用

页数：6

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