Sol-gel process and properties of textured Pb(Zr, Ti)O3 films on silicon wafers

被引：1
|
作者：
Gong, W [1 ]
Chu, XC [1 ]
Li, JF [1 ]
Gui, ZL [1 ]
Li, LT [1 ]
机构：
[1] Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2 | 2005年 / 280-283卷
关键词：
PZT; ferroelectricity; piezoelectricity; thin films;
D O I：
10.4028/www.scientific.net/KEM.280-283.239
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.
引用
收藏
页码：239 / 242
页数：4
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