Piezoelectric properties of epitaxial Pb(Zr,Ti)O3 thin films grown on Si substrates by the sol-gel method

被引：11

作者：

Tan, Goon ^{[1
]}

Kweon, Sang-Hyo ^{[2
]}

Kanno, Isaku ^{[2
]}

机构：

[1] Osaka Metropolitan Univ, Fac Liberal Arts Sci & Global Educ, Div Phys, Sakai, Osaka 5998531, Japan

[2] Kobe Univ, Dept Mech Engn, 1-1 Rokkodai Cho,Nada Ku, Kobe 6578501, Japan

来源：

THIN SOLID FILMS | 2023年 / 764卷

关键词：

Epitaxial growth; Silicon substrates; Sol -gel deposition; Lead zirconate titanate; Piezoelectric coefficient; Microelectromechanical systems devices; LEAD-ZIRCONATE-TITANATE; ORIENTATION DEPENDENCE; SRTIO3;

D O I：

10.1016/j.tsf.2022.139612

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we investigated the piezoelectric characteristics of the sol-gel Pb(Zr0.52Ti0.48)O3 (PZT) films deposited on two different types of substrates. Epitaxial PZT piezoelectric thin films were grown on ZrO2-buff-ered Si substrates, while polycrystalline PZT thin films were grown on conventional Pt/Ti/Si substrates by the sol-gel method. X-ray diffraction measurements revealed a cube-on-cube epitaxy on the buffered Si substrate. The piezoelectric coefficient (e31,f) of the epitaxial PZT thin films was investigated by measuring the tip displacement of PZT cantilevers, and the |e31,f | values were in the range of 8.9-12 C/m2. The voltage depen-dence of the |e31,f | values was more constant than that of the polycrystalline sol-gel PZT/Si cantilever. The epitaxial sol-gel PZT films thus exhibited good piezoelectric properties for applications in micro -electromechanical systems devices.

引用

页数：5

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