Piezoelectric properties of epitaxial Pb(Zr,Ti)O3 thin films grown on Si substrates by the sol-gel method

被引：11
|
作者：
Tan, Goon [1 ]
Kweon, Sang-Hyo [2 ]
Kanno, Isaku [2 ]
机构：
[1] Osaka Metropolitan Univ, Fac Liberal Arts Sci & Global Educ, Div Phys, Sakai, Osaka 5998531, Japan
[2] Kobe Univ, Dept Mech Engn, 1-1 Rokkodai Cho,Nada Ku, Kobe 6578501, Japan
来源：
THIN SOLID FILMS | 2023年 / 764卷
关键词：
Epitaxial growth; Silicon substrates; Sol -gel deposition; Lead zirconate titanate; Piezoelectric coefficient; Microelectromechanical systems devices; LEAD-ZIRCONATE-TITANATE; ORIENTATION DEPENDENCE; SRTIO3;
D O I：
10.1016/j.tsf.2022.139612
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we investigated the piezoelectric characteristics of the sol-gel Pb(Zr0.52Ti0.48)O3 (PZT) films deposited on two different types of substrates. Epitaxial PZT piezoelectric thin films were grown on ZrO2-buff-ered Si substrates, while polycrystalline PZT thin films were grown on conventional Pt/Ti/Si substrates by the sol-gel method. X-ray diffraction measurements revealed a cube-on-cube epitaxy on the buffered Si substrate. The piezoelectric coefficient (e31,f) of the epitaxial PZT thin films was investigated by measuring the tip displacement of PZT cantilevers, and the |e31,f | values were in the range of 8.9-12 C/m2. The voltage depen-dence of the |e31,f | values was more constant than that of the polycrystalline sol-gel PZT/Si cantilever. The epitaxial sol-gel PZT films thus exhibited good piezoelectric properties for applications in micro -electromechanical systems devices.
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页数：5
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