Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements

被引：6
|
作者：
Chen, CH [1 ]
Deen, MJ [1 ]
Matloubian, M [1 ]
Cheng, YH [1 ]
机构：
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
来源：
ICMTS 2001: PROCEEDINGS OF THE 2001 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2001年
关键词：
D O I：
10.1109/ICMTS.2001.928651
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extraction method to obtain the induced gate noise (i(g)i(g)*), channel thermal noise (i(d)i(d)*) and their crosscorrelation (i(g)i(d)*) in submicron MOSFETs directly from scattering and RF noise parameter measurements is presented and experimentally verified. In addition, the extracted induced gate noise, channel thermal noise and their correlation versus frequency, bias condition and channel length are presented.
引用
收藏
页码：131 / 135
页数：5
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