Germanium Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal-Oxide-Semiconductor-Compatible Process

被引：11

作者：

Peng, J. W. ^{[1
,2
]}

Singh, N. ^{[2
]}

Lo, G. Q. ^{[2
]}

Bosman, M. ^{[2
]}

Ng, C. M. ^{[3
]}

Lee, S. J. ^{[1
]}

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

[3] GLOBALFOUNDRIES, Singapore 738406, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期

关键词：

Core/shell (C/S); germanium (Ge); metal-oxide-semiconductor field-effect transistor (MOSFET); nanowire (NW); top-down; BACKSCATTERING CHARACTERISTICS; PERFORMANCE; SI; PMOSFETS; GROWTH;

D O I：

10.1109/TED.2010.2088125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a complementary metal-oxide-semiconductor-compatible top-down fabrication of Ge nanowires along with their integration into pMOSFETs with "HfO2/TaN" high-k/metal gate stacks. Lateral Ge wires down to 14 nm in diameter are achieved using a two-step dry etch process on a high-quality epitaxial Ge layer. To improve the interface quality between the Ge nanowire and the HfO2, thermally grown GeO2 and epitaxial-Si shells are used as interlayers. Devices with a GeO2 shell demonstrated excellent I-ON/I-OFF ratios (> 10(6)), whereas the epitaxial-Si shell was found to improve the field-effect mobility of the holes in Ge nanowires to 254 cm(2)V(-1) . s(-1).

引用

页码：74 / 79

页数：6

共 50 条

[41] Ultralow-Power Complementary Metal-Oxide-Semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors
Ma, R. M.
Peng, R. M.
Wen, X. N.
Dai, L.
Liu, C.
Sun, T.
Xu, W. J.
Qin, G. G.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (10) : 6428 - 6431
[42] Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
Liao, M. H.
Liu, C. W.
Yeh, Lingyen
Lee, T. -L.
Liang, M. -S.
APPLIED PHYSICS LETTERS, 2008, 92 (06)
[43] Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor
Wang Xin
Lu Wu
Wu Xue
Ma Wu-Ying
Cui Jiang-Wei
Liu Mo-Han
Jiang Ke
ACTA PHYSICA SINICA, 2014, 63 (22) : 226101
[44] Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor
Zhang Meng
Yao Ruo-He
Liu Yu-Rong
Geng Kui-Wei
ACTA PHYSICA SINICA, 2020, 69 (17)
[45] The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor
Tan, Michael L. P.
Arora, Vijay K.
Saad, Ismail
Ahmadi, Mohammad Taghi
Ismail, Razali
JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
[46] The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor
Tan, Michael L. P.
Arora, Vijay K.
Saad, Ismail
Taghi Ahmadi, Mohammad
Ismail, Razali
Journal of Applied Physics, 2009, 105 (07):
[47] Ge/Si quantum-dot metal-oxide-semiconductor field-effect transistor
Yakimov, AI
Dvurechenskii, AV
Kirienko, VV
Nikiforov, AI
APPLIED PHYSICS LETTERS, 2002, 80 (25) : 4783 - 4785
[48] A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH A 20-NM CHANNEL LENGTH
HARTSTEIN, A
ALBERT, NF
BRIGHT, AA
KAPLAN, SB
ROBINSON, B
TORNELLO, JA
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2493 - 2495
[49] Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier
van, der Donk, Armand G.H.
Bergveld, Piet
Voorthuyzen, Johannes A.
Journal of the Acoustical Society of America, 1992, 91 (4 pt 1):
[50] Sharp Resonance in a Metal-Oxide-Semiconductor Field-Effect Transistor with Multifinger Gate Configuration
Abe, Kazuhide
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (07)

← 1 2 3 4 5 →