Ge/Si quantum-dot metal-oxide-semiconductor field-effect transistor

被引：16

作者：

Yakimov, AI ^{[1
]}

Dvurechenskii, AV ^{[1
]}

Kirienko, VV ^{[1
]}

Nikiforov, AI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 25期

关键词：

D O I：

10.1063/1.1488688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the operation of Si metal-oxide-semiconductor field-effect transistor with an array of similar to10(3) 10 nm diameter Ge self-assembled quantum dots embedded into the active channel. The drain current versus gate voltage characteristics show oscillations caused by Coulomb interaction of holes in the fourfold-degenerate excited state of the dots at Tless than or equal to200 K. A dot charging energy of similar to43 meV (i.e., >kT=26 meV at T=300 K) and disorder energy of similar to20 meV are determined from the oscillation period and the temperature dependence study of current maxima, respectively. (C) 2002 American Institute of Physics.

引用

页码：4783 / 4785

页数：3

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