A memristive diode for neuromorphic computing

被引：5

作者：

Wang, Xiaolei ^{[1
,2
,3
]}

Shao, Qi ^{[1
,2
]}

Ku, Pui Sze ^{[1
,2
]}

Ruotolo, Antonio ^{[1
,2
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, CFP, Kowloon, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 138卷

基金：

美国国家科学基金会;

关键词：

Memristor; Neuromorphic circuits; Adaptive electronics; NONVOLATILE MEMORY; DOPED SRTIO3; TRANSITION; INSULATOR; MECHANISM; DEVICE; FILMS; ZNO;

D O I：

10.1016/j.mee.2014.12.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memristive devices may extent the potential of information processing beyond Boolean computation. Of particular interest for computer science are those devices that change behavior according to the particular stimulus given. This property is called plasticity and is typical of biological systems, like neuron synapses. We here show that a memristive diode can be fabricated by using low-resistive ZnO. Bipolar memristive switching is induced in ZnO-based Schottky diodes. The electrical characterization of the devices confirms that switching is due to uniform migration of oxygen vacancies under the interface. The induced electrical state can be dynamically altered according to polarity, amplitude and duration of applied electrical stimuli. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：7 / 11

页数：5

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