Wide Temperature Range Low Drop Output Units Realized with 250 nm 40 V BCD Technology

被引：0
|
作者：
Surin, Igor K. [1 ,2 ]
Ryzhkov, Vladimir A. [1 ]
Vasilyev, Vladislav Yu. [1 ,2 ]
机构：
[1] SibIS LLC, Novosibirsk, Russia
[2] Novosibirsk State Tech Univ, Novosibirsk, Russia
来源：
2017 18TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM) | 2017年
关键词：
Power Supply Units; low drop out regulator; LDO; BCD Technology; Bandgap voltage reference;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5 V and 12 V embedded low drop output (LDO) units are designed as parts of Multi-Functional Power Converter Control Integrated Circuits (MFPCC IC) and fabricated using 250 nm 40 V BCD (Bipolar, CMOS, DMOS) technology. Measured LDO parameters are in agreement with designed parameters in the temperature operation range -40...+85 degrees C. It has been shown that developed LDO units operate properly in a wide temperature range of -75 degrees C...+ 150 degrees C.
引用
收藏
页码：477 / 480
页数：4
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