Wide Temperature Range Low Drop Output Units Realized with 250 nm 40 V BCD Technology

被引：0

作者：

Surin, Igor K. ^{[1
,2
]}

Ryzhkov, Vladimir A. ^{[1
]}

Vasilyev, Vladislav Yu. ^{[1
,2
]}

机构：

[1] SibIS LLC, Novosibirsk, Russia

[2] Novosibirsk State Tech Univ, Novosibirsk, Russia

来源：

2017 18TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM) | 2017年

关键词：

Power Supply Units; low drop out regulator; LDO; BCD Technology; Bandgap voltage reference;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

5 V and 12 V embedded low drop output (LDO) units are designed as parts of Multi-Functional Power Converter Control Integrated Circuits (MFPCC IC) and fabricated using 250 nm 40 V BCD (Bipolar, CMOS, DMOS) technology. Measured LDO parameters are in agreement with designed parameters in the temperature operation range -40...+85 degrees C. It has been shown that developed LDO units operate properly in a wide temperature range of -75 degrees C...+ 150 degrees C.

引用

页码：477 / 480

页数：4

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