A 1.2V On-chip Output-capacitor-less Low Dropout Regulator based on Flipped Voltage Follower in 45nm CMOS Technology

被引:2
|
作者
Panigrahi, Antaryami [1 ]
Mathew, Agile [1 ]
机构
[1] CIT Kokrajhar, Dept Elect & Commun Engn, Kokrajhar 783370, Assam, India
关键词
CMOS; LDO; Voltage Regulator; Voltage Follower; LDO;
D O I
10.1109/DTIS53253.2021.9525422
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
A low dropout regulator(LDO) based on flipped voltage follower (FVF) assisted by a voltage combiner is presented in this work. This LDO offers stable regulation over wide range of load capacitances starting from 10pF to 50nF, without depending upon on-chip or off-chip load capacitance. It also offers extended the load regulation operation from 200 mu A to 50mA. This enhancement is achieved by incorporating a a voltage combiner stage, small feed-forward capacitor (C-F) and compensation circuitry. For improving stability, Miller's Compensation with a nulling resistor is implemented using 75pF capacitor, 4.5k Omega resistor. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot during sharp load current transitions down to 200mV at 100pF. The designed LDO is verified with simulation in 45-nm CMOS process. For an input voltage of a 1.2V and output voltage of 1.08V, the simulated worst case undershoot and overshoot are respectively 115 mV and 74 mV, respectively, for load transient of 200 mu A to 50mA within edge times of 10 nSec. The quiescent current is 25uA. The simulated PSR is -42 dB over the band of 10-1kHz, -20dB at 1MHz over 200uA-50mA of load currents.
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页数:6
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