Towards a Reconfigurable Bit-Serial/Bit-Parallel Vector Accelerator Using In-Situ Processing-In-SRAM

被引:0
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作者
Al-Hawaj, Khalid [1 ]
Afuye, Olalekan [1 ]
Agwa, Shady [1 ]
Apsel, Alyssa [1 ]
Batten, Christopher [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vector accelerators can efficiently execute regular data-parallel workloads, but they require expensive multi-ported register files to feed large vector ALUs. Recent work on in-situ processing-in-SRAM shows promise in enabling area-efficient vector acceleration. This work explores two different approaches to leveraging in-situ processing-in-SRAM: BS-VRAM, which uses bit-serial execution, and BP-VRAM, which uses bit-parallel execution. The two approaches have very different latency vs. throughput trade-offs. BS-VRAM requires more cycles per operation, but is able to execute thousands of operations in parallel, while BP-VRAM requires fewer cycles per operation, but can only execute hundreds of operations in parallel. This paper is the first work to perform a rigorous evaluation of bit-serial vs. bit-parallel in-situ processing-in-SRAM. Our results show that both approaches have similar area overheads. For 32-bit arithmetic operations, BS-VRAM improves throughput by 1.3-5.0x compared to BP-VRAM, while BP-VRAM improves latency by 3.0-23.0x compared to BS-VRAM.
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