Material characterization need for SiC-based devices

被引：36
|
作者：
Janzén, E
Henry, A [1 ]
Bergman, JP
Ellison, A
Magnusson, B
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] ABB Corp Res, S-72178 Vasteras, Sweden
[3] Okmet AB, S-58330 Linkoping, Sweden
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期
关键词：
SiC; photoluminescence; carrier lifetime; topography; FTIR; interference;
D O I：
10.1016/S1369-8001(00)00135-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The simultaneous development of suitable characterization techniques that provide fast feedback to the growth as well as basic material understanding have enabled the fast development of epitaxial and bulk growth of SiC. The characterization techniques can roughly be divided into two different categories, routine characterization that are made on most grown material and specialized characterization that are performed in order to study and understand specific material properties. The routine measurements described in this paper are all based on optical and non-destructive techniques. The main effort in this field is currently to study and understand the role of structural defects, often replicated from the substrate into the epilayer. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：181 / 186
页数：6
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