Future trends in SiC-based microelectronic devices

被引：0
|
作者：
Lebedev, AA [1 ]
Chelnokov, VE [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES | 1998年 / 47卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：431 / 445
页数：15
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