Carrier mobility model for simulation of SiC-based electronic devices

被引：51

作者：

Mnatsakanov, TT ^{[1
]}

Levinshtein, ME

Pomortseva, LI

Yurkov, SN

机构：

[1] All Russian Elect Engn Inst, Moscow 111250, Russia

[2] Russian Acad Sci, Ioffe Physciotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 09期

关键词：

D O I：

10.1088/0268-1242/17/9/313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide (SiC): 6H, 4H and 3C in wide ranges of temperature and concentration. The obtained results can be directly used for the computer simulation of SiC-based devices. Different approaches to the analytical approximation of SiC parameters are critically correlated and analysed.

引用

页码：974 / 977

页数：4

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