Noise Coupling Models in Heterogeneous 3-D ICs

Models of coupling noise from an aggressor module to a victim module by way of through silicon vias (TSVs) within heterogeneous 3-D integrated circuits (ICs) are presented in this paper. Existing TSV models are enhanced for different substrate materials within heterogeneous 3-D ICs. Each model is adapted to each substrate material according to the local noise coupling characteristics. The 3-D noise coupling system is evaluated for isolation efficiency over frequencies of up to 100 GHz. Isolation improvement techniques, such as reducing the ground network inductance and increasing the distance between the aggressor and victim modules, are quantified in terms of noise improvements. A maximum improvement of 73.5 dB for different ground network impedances and a difference of 38.5 dB in isolation efficiency for greater separation between the aggressor and victim modules are demonstrated. Compact, accurate, and computationally efficient models are extracted from the transfer function for each of the heterogeneous substrate materials. The reduced transfer functions are used to explore different manufacturing and design parameters to evaluate coupling noise across multiple 3-D planes.