40 Gbit/s/ch 2 x 2 switch IC using InP HEMTs

被引：1

作者：

Kamitsuna, H ^{[1
]}

Yamane, Y ^{[1
]}

Tokumitsu, M ^{[1
]}

Sugahara, H ^{[1
]}

Muraguchi, A ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 09期

关键词：

Integrated circuits;

D O I：

10.1049/el:20050261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power 2 x 2 switch IC using InP HEMTs as cold FETs is presented. It has a logic-level-independent interface since no signal line is grounded. The IC yields low insertion loss of 1.5-2.7 dB and high isolation of > 21.2 dB below 30 GHz. When two 40 Gbit/s signals were input, error-free operation was confirmed with virtually zero power dissipation.

引用

页码：532 / 534

页数：3

共 50 条

[1] 40Gbit/s, fully-integrated 1:2 demultiplexer IC using InAlAs/InGaAs/InP HEMTs
Otsuji, T
Yoneyama, M
Imai, Y
Enoki, T
Umeda, Y
[J]. ELECTRONICS LETTERS, 1997, 33 (16) : 1409 - 1410
[2] 46Gbit/s multiplexer and 40Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs
Otsuji, T
Yoneyama, M
Imai, Y
Yamaguchi, S
Enoki, T
Umeda, Y
Sano, E
[J]. ELECTRONICS LETTERS, 1996, 32 (07) : 685 - 686
[3] 40Gbit/s fully monolithic clock recovery IC using InAlAs/InGaAs/InP HEMTs
Murata, K
Yamane, Y
[J]. ELECTRONICS LETTERS, 2000, 36 (19) : 1617 - 1618
[4] A fast low-power 4x4 switch IC using InP HEMTs for 10-Gbit/s systems
Kamitsuna, H
Yamane, Y
Tokumitsu, M
Sugahara, H
Muraguchi, M
[J]. 2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY, 2004, : 97 - 100
[5] 80Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Otsuji, T
Murata, K
Enoki, T
Umeda, Y
[J]. ELECTRONICS LETTERS, 1998, 34 (01) : 113 - 114
[6] 64Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Otsuji, T
Yoneyama, M
Imai, Y
Enoki, T
Umeda, Y
[J]. ELECTRONICS LETTERS, 1997, 33 (17) : 1488 - 1489
[7] An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Otsuji, T
Murata, K
Enoki, T
Umeda, Y
[J]. GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997, 1997, : 183 - 186
[8] 45Gbit/s decision IC module using InAlAs/InGaAs/InP HEMTs
Murata, K
Otsuji, T
Yamane, Y
[J]. ELECTRONICS LETTERS, 1999, 35 (16) : 1379 - 1380
[9] 50-Gbit/s demultiplexer IC module using InAlAs/InGaAs/InP HEMTs
Sano, K
Murata, K
Yamane, Y
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (11) : 1786 - 1788
[10] 40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology
Konczykowska, A
Riet, M
Berdaguer, P
Bove, P
Kahn, M
Godin, J
[J]. ELECTRONICS LETTERS, 2005, 41 (16) : 905 - 906

← 1 2 3 4 5 →