Technology/Circuit/System Co-Optimization and Benchmarking for Multilayer Graphene Interconnects at Sub-10-nm Technology Node

被引:19
|
作者
Pan, Chenyun [1 ]
Raghavan, Praveen [2 ]
Ceyhan, Ahmet [1 ]
Catthoor, Francky [2 ]
Tokei, Zsolt [2 ]
Naeemi, Azad [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] IMEC, B-3001 Leuven, Belgium
关键词
32-bit adder; ARM core; delay; energy-delay product (EDP); multilayer graphene interconnect; performance; PERFORMANCE;
D O I
10.1109/TED.2015.2409875
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Based on realistic circuit-and system-level simulations, graphene interconnects are analyzed in terms of multiple material properties, such as the mean free path (MFP), the contact resistance, and the edge roughness. The bench-marking results indicate that the advantage of using graphene interconnects occurs only under certain circumstances. The device-level parameters, including the supply and threshold voltages, and the circuit-level parameters, including the wire length and width, have large impacts on both the delay and energy-delay product (EDP). At the circuit level, one representative circuit, a 32-bit adder, is investigated, where up to 40% and 70% improvements in delay and EDP are observed. At the system-level analysis, an ARM Cortex-M0 processor is synthesized, and placement and routing are performed. After replacing copper interconnects with multilayer graphene interconnects, up to 15% and 22% performance improvements in clock frequency and EDP have been observed. It is also demonstrated that the benefits of using graphene for the ARM core processor are strongly dependent on the quality of the graphene, such as the MFP and the edge roughness.
引用
收藏
页码:1530 / 1536
页数:7
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