Effects of Mg dopant in Al-composition-graded Al x Ga1-x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction

被引：12

作者：

Sato, Kosuke ^{[1
,2
]}

Yamada, Kazuki ^{[2
]}

Sakowski, Konrad ^{[3
,4
,5
]}

Iwaya, Motoaki ^{[2
]}

Takeuchi, Tetsuya ^{[2
]}

Kamiyama, Satoshi ^{[2
]}

Kangawa, Yoshihiro ^{[3
]}

Kempisty, Pawel ^{[3
,4
]}

Krukowski, Stanislaw ^{[4
]}

Piechota, Jacek ^{[4
]}

Akasaki, Isamu ^{[2
]}

机构：

[1] Asahi Kasei Corp, Adv Devices Technol Ctr, Fuji, Shizuoka 4168501, Japan

[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[3] Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan

[4] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[5] Univ Warsaw, Inst Appl Math & Mech, PL-02097 Warsaw, Poland

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 09期

关键词：

AlGaN; ultraviolet; LED; dopant; composition graded; electrical conductivitiy;

D O I：

10.35848/1882-0786/ac1d64

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded Al x Ga1-x N (0.45 <= x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.

引用

页数：5

共 47 条

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