Effects of Mg dopant in Al-composition-graded Al x Ga1-x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction

被引：12
|
作者：
Sato, Kosuke [1 ,2 ]
Yamada, Kazuki [2 ]
Sakowski, Konrad [3 ,4 ,5 ]
Iwaya, Motoaki [2 ]
Takeuchi, Tetsuya [2 ]
Kamiyama, Satoshi [2 ]
Kangawa, Yoshihiro [3 ]
Kempisty, Pawel [3 ,4 ]
Krukowski, Stanislaw [4 ]
Piechota, Jacek [4 ]
Akasaki, Isamu [2 ]
机构：
[1] Asahi Kasei Corp, Adv Devices Technol Ctr, Fuji, Shizuoka 4168501, Japan
[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[3] Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan
[4] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[5] Univ Warsaw, Inst Appl Math & Mech, PL-02097 Warsaw, Poland
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 09期
关键词：
AlGaN; ultraviolet; LED; dopant; composition graded; electrical conductivitiy;
D O I：
10.35848/1882-0786/ac1d64
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded Al x Ga1-x N (0.45 <= x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.
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页数：5
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