Effects of Mg dopant in Al-composition-graded Al x Ga1-x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction

被引：12
|
作者：
Sato, Kosuke [1 ,2 ]
Yamada, Kazuki [2 ]
Sakowski, Konrad [3 ,4 ,5 ]
Iwaya, Motoaki [2 ]
Takeuchi, Tetsuya [2 ]
Kamiyama, Satoshi [2 ]
Kangawa, Yoshihiro [3 ]
Kempisty, Pawel [3 ,4 ]
Krukowski, Stanislaw [4 ]
Piechota, Jacek [4 ]
Akasaki, Isamu [2 ]
机构：
[1] Asahi Kasei Corp, Adv Devices Technol Ctr, Fuji, Shizuoka 4168501, Japan
[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[3] Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan
[4] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[5] Univ Warsaw, Inst Appl Math & Mech, PL-02097 Warsaw, Poland
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 09期
关键词：
AlGaN; ultraviolet; LED; dopant; composition graded; electrical conductivitiy;
D O I：
10.35848/1882-0786/ac1d64
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded Al x Ga1-x N (0.45 <= x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.
引用
收藏
页数：5
相关论文
共 47 条
  • [21] Electron affinities of X12O12 (X = Be, Mg, and Ca), X12N12 (X = B, Al, and Ga), and X12P12 (X = B, Al, and Ga) nanocages: NBO calculations and energy decomposition analysis
    Farrokhpour, H.
    Yousefvand, M.
    Jouypazadeh, H.
    Hadadzadeh, H.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2020, 135 (09):
  • [22] Interband transitions of AlN/Al x Ga1-x N (0.65 aparts per thousandcurrency sign x aparts per thousandcurrency sign 0.85) single quantum wells
    Kim, Hyeon Soo
    Jeong, Soon Young
    Park, Seoung-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 65 (07) : 1096 - 1100
  • [23] High-Temperature Growth of GaN and Al x Ga1-x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy
    Billingsley, Daniel
    Henderson, Walter
    Doolittle, W. Alan
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (05) : 473 - 477
  • [24] Investigation of metallic interdiffusion in Al x Ga1-x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling
    Tellez, H.
    Vadillo, J. M.
    Laserna, J. J.
    ANALYTICAL AND BIOANALYTICAL CHEMISTRY, 2010, 397 (07) : 2865 - 2871
  • [25] Influence of Al x Ga1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)
    Gundimeda, Abhiram
    Rostami, Mohammadreza
    Frentrup, Martin
    Hinz, Alexander
    Kappers, Menno J.
    Wallis, David J.
    Oliver, Rachel A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (17)
  • [26] Characterization of Al X Ga1-X N/GaN High Electron Mobility Transistor Structures with Mercury Probe Capacitance-Voltage and Current-Voltage
    Tucker, Eric
    Ramos, Frank
    Frey, Samuel
    Hillard, Robert J.
    Horvath, Peter
    Zsakai, Gyula
    Marton, Attila
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (04):
  • [27] Substrate off-angle dependency of Al content in Al x Ga1-x N/GaN high-electron-mobility transistor structures on free-standing GaN substrates
    Fukuhara, Noboru
    Horikiri, Fumimasa
    Narita, Yoshinobu
    Isono, Ryota
    Tanaka, Takeshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (07)
  • [28] Formation of Ni Diffusion-Induced Surface Traps in GaN/Al x Ga1-x N/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition
    Kajen, R. S.
    Bera, L. K.
    Tan, H. R.
    Dolmanan, S. B.
    Cheong, Z. W.
    Tripathy, S.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (01) : 493 - 498
  • [29] Special features of the electron energy spectrum of hexagonal GaN and its Y x Ga1-x N (Y aparts per thousand B, Al, In) solid solutions
    Litinsky, A. O.
    Novikov, S. I.
    RUSSIAN PHYSICS JOURNAL, 2012, 55 (07) : 752 - 758
  • [30] MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1-x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
    Bhuiyan, A. F. M. Anhar Uddin
    Feng, Zixuan
    Johnson, Jared M.
    Huang, Hsien-Lien
    Hwang, Jinwoo
    Zhao, Hongping
    CRYSTAL GROWTH & DESIGN, 2020, 20 (10) : 6722 - 6730
12345