Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors (vol 111, 013506, 2017)

被引：0
|
作者：
Latorre-Rey, Alvaro D. [1 ]
Sabatti, Flavio F. M. [1 ]
Albrecht, John D. [2 ]
Saraniti, Marco [1 ]
机构：
[1] Arizona State Univ, Tempe, AZ 85287 USA
[2] Michigan State Univ, E Lansing, MI 48824 USA
来源：
APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 12期
关键词：
D O I：
10.1063/1.5003410
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [1] Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors
    Latorre-Rey, Alvaro D.
    Sabatti, Flavio F. M.
    Albrecht, John D.
    Saraniti, Marco
    APPLIED PHYSICS LETTERS, 2017, 111 (01)
  • [2] Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
    Brazzini, Tommaso
    Casbon, Michael A.
    Sun, Huarui
    Uren, Michael J.
    Lees, Jonathan
    Tasker, Paul J.
    Jung, Helmut
    Blanck, Herve
    Kuball, Martin
    APPLIED PHYSICS LETTERS, 2015, 106 (21)
  • [3] Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation
    Hisaka, Takayuki
    Nogami, Yoichi
    Sasaki, Hajime
    Yoshida, Naohito
    Hayashi, Kazuo
    Villanueva, Anita A.
    Del Alamo, Jesus A.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (02) : 833 - 838
  • [4] Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation
    Hisaka, Takayuki
    Nogami, Yoichi
    Sasaki, Hajime
    Yoshida, Naohito
    Hayashi, Kazuo
    Villanueva, Anita A.
    Del Alamo, Jesus A.
    Japanese Journal of Applied Physics, 2008, 47 (2 PART 1): : 833 - 838
  • [5] 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts
    Marti, Diego
    Tirelli, Stefano
    Teppati, Valeria
    Lugani, Lorenzo
    Carlin, Jean-Francois
    Malinverni, Marco
    Grandjean, Nicolas
    Bolognesi, C. R.
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (01) : 17 - 19
  • [6] Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors
    Tapajna, Milan
    Killat, Nicole
    Palankovski, Vassil
    Gregusova, Dagmar
    Cico, Karol
    Carlin, Jean-Francois
    Grandjean, Nicolas
    Kuball, Martin
    Kuzmik, Jan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2793 - 2801
  • [7] Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
    Puzyrev, Y. S.
    Roy, T.
    Beck, M.
    Tuttle, B. R.
    Schrimpf, R. D.
    Fleetwood, D. M.
    Pantelides, S. T.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (03)
  • [8] Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
    Lin, Yu-Shyan
    Lin, Shin-Fu
    MICROMACHINES, 2021, 12 (01) : 1 - 7
  • [9] Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors
    Meyer, David J.
    Feygelson, Tatyana I.
    Anderson, Travis J.
    Roussos, Jason A.
    Tadjer, Marko J.
    Downey, Brian P.
    Katzer, D. Scott
    Pate, Bradford B.
    Ancona, Mario G.
    Koehler, Andrew D.
    Hobart, Karl D.
    Eddy, Charles R., Jr.
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) : 1013 - 1015
  • [10] A scalable large-signal model with self-heating effect based on a hybrid-scaling rule for GaN high-electron-mobility transistors
    Gu, Siyu
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2021, 34 (06)
12345