Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

被引：32

作者：

Meyer, David J. ^{[1
]}

Feygelson, Tatyana I. ^{[1
]}

Anderson, Travis J. ^{[1
]}

Roussos, Jason A. ^{[1
]}

Tadjer, Marko J. ^{[1
,2
]}

Downey, Brian P. ^{[1
]}

Katzer, D. Scott ^{[1
]}

Pate, Bradford B. ^{[1
]}

Ancona, Mario G. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] Amer Soc Engn Educ, Washington, DC 20375 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

NCD; load-pull; amplifier; reliability; HEMTS;

D O I：

10.1109/LED.2014.2345631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to outperform reference devices in transconductance, large-signal gain, output power density, and power-added efficiency at 4 GHz. The measured improvements were suspected to be related to reduced dispersion and lower source access resistance afforded by the NCD film.

引用

页码：1013 / 1015

页数：3

共 50 条

[1] Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
Lin, Yu-Shyan
Lin, Shin-Fu
[J]. MICROMACHINES, 2021, 12 (01) : 1 - 7
[2] Development of high performance AlGaN/GaN high electron mobility transistors for RF applications
Sood, AK
Egerton, EJ
Puri, YR
Clarke, FW
Hwang, JCM
Dabiran, A
Chow, P
Anderson, T
Gupta, A
Souzis, A
Zwieback, I
[J]. FREE SPACE LASER COMMUNICATIONS IV, 2004, 5550 : 130 - 144
[3] Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process
Tadjer, Marko J.
Anderson, Travis J.
Feygelson, Tatyana I.
Hobart, Karl D.
Hite, Jennifer K.
Koehler, Andrew D.
Wheeler, Virginia D.
Pate, Bradford B.
Eddy, Charles R., Jr.
Kub, Fritz J.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (04): : 893 - 897
[4] Large-Signal Modeling up to W-band of AlGaN/GaN based High- Electron-Mobility Transistors
Cutivet, A.
Altuntas, P.
Defrance, N.
Okada, E.
Avramovic, V.
Lesecq, M.
Hoel, V.
De Jaeger, J. -C.
Boone, F.
Maher, H.
[J]. 2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 93 - 96
[5] DIAMOND COATED ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS - EFFECT OF DEPOSITION PROCESS ON GATE ELECTRODE
Vanko, Gabriel
Izak, Tibor
Babchenko, Oleg
Kromka, Alexander
[J]. NANOCON 2015: 7TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION, 2015, : 168 - 173
[6] dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Luo, B
Johnson, JW
Ren, F
Allums, KK
Abernathy, CR
Pearton, SJ
Dwivedi, R
Fogarty, TN
Wilkins, R
Dabiran, AM
Wowchack, AM
Polley, CJ
Chow, PP
Baca, AG
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2196 - 2198
[7] RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
Marti, Diego
Bolognesi, C. R.
Cordier, Yvon
Chmielowska, Magdalena
Ramdani, Mohammed
[J]. APPLIED PHYSICS EXPRESS, 2011, 4 (06)
[8] RF performance of AlGaN/GaN high-electron-mobility transistors grown on silicon (110)
Millimeter-Wave Electronics Group, ETH-Zürich, Gloriastrasse 35, CH-8092 Zürich, Switzerland
不详
[J]. Appl. Phys. Express, 6
[9] DC and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Luo, B
Johnson, JW
Ren, F
Allums, KK
Abernathy, CR
Pearton, SJ
Dwivedi, R
Fogarty, TN
Wilkins, R
Dabiran, AM
Wowchack, AM
Polley, CJ
Chow, PP
Baca, AG
[J]. STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 191 - 197
[10] Large-Signal Modeling of a Scalable High-Q AlGaN/GaN High Electron-Mobility Varactor
Amirpour, Raul
Schwantuschke, Dirk
van Raay, Friedbert
Brueckner, Peter
Quay, Ruediger
Ambacher, Oliver
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (03) : 922 - 927

← 1 2 3 4 5 →