Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation

被引：0
|
作者：
Hisaka, Takayuki [1 ]
Nogami, Yoichi [1 ]
Sasaki, Hajime [1 ]
Yoshida, Naohito [1 ]
Hayashi, Kazuo [1 ]
Villanueva, Anita A. [2 ]
Del Alamo, Jesus A. [2 ]
机构：
[1] High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan
[2] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 2 PART 1期
关键词：
High electron mobility transistors;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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页码：833 / 838
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