Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation

被引：0

作者：

Hisaka, Takayuki ^{[1
]}

Nogami, Yoichi ^{[1
]}

Sasaki, Hajime ^{[1
]}

Yoshida, Naohito ^{[1
]}

Hayashi, Kazuo ^{[1
]}

Villanueva, Anita A. ^{[2
]}

Del Alamo, Jesus A. ^{[2
]}

机构：

[1] High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan

[2] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States

来源：

Japanese Journal of Applied Physics | 2008年 / 47卷 / 2 PART 1期

关键词：

High electron mobility transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：833 / 838

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