Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors (vol 111, 013506, 2017)

被引：0
|
作者：
Latorre-Rey, Alvaro D. [1 ]
Sabatti, Flavio F. M. [1 ]
Albrecht, John D. [2 ]
Saraniti, Marco [1 ]
机构：
[1] Arizona State Univ, Tempe, AZ 85287 USA
[2] Michigan State Univ, E Lansing, MI 48824 USA
来源：
APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 12期
关键词：
D O I：
10.1063/1.5003410
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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