ANALYSIS OF IN-PLANE STRUCTURES OF THE As-DEPOSITED Si SURFACES USING GRAZING-ANGLE X-RAY STANDING WAVES.

被引：0
|
作者：
Sakata, O. [1 ]
Kumano, S. [1 ]
Matsuki, N. [1 ]
Tanaka, Y. [1 ]
Nikolaenko, A. M. [1 ]
Hashizume, H. [1 ]
机构：
[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 226, Japan
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 1996年 / 52卷
关键词：
D O I：
10.1107/S0108767396081111
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
PS12.01.09
引用
收藏
页码：C460 / C460
页数：1
相关论文
共 50 条
  • [41] Determination of particle-induced structural disorder depth profile in crystals using the grazing-angle incidence hard x-ray backscattering diffraction technique
    Bezirganyan, Hakob P.
    Bezirganyan, Siranush E.
    Bezirganyan, Petros H., Jr.
    Bezirganyan, Hayk H., Jr.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (49)
  • [42] Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice
    Stangl, J
    Holy, V
    Roch, T
    Daniel, A
    Bauer, G
    Zhu, J
    Brunner, K
    Abstreiter, G
    PHYSICAL REVIEW B, 2000, 62 (11): : 7229 - 7236
  • [43] Grazing-incidence in-plane X-ray diffraction on ultra-thin organic films using standard laboratory equipment
    Neuschitzer, Markus
    Moser, Armin
    Neuhold, Alfred
    Kraxner, Johanna
    Stadlober, Barbara
    Oehzelt, Martin
    Salzmann, Ingo
    Resel, Roland
    Novak, Jiri
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2012, 45 : 367 - 370
  • [44] Quantitative determination of the lateral density and intermolecular correlation between proteins anchored on the membrane surfaces using grazing incidence small-angle X-ray scattering and grazing incidence X-ray fluorescence
    Abuillan, Wasim
    Vorobiev, Alexei
    Hartel, Andreas
    Jones, Nicola G.
    Engstler, Markus
    Tanaka, Motomu
    JOURNAL OF CHEMICAL PHYSICS, 2012, 137 (20):
  • [45] Observations of TiO2 surfaces using totally reflected x-ray in-plane diffraction under UV irradiation
    Horiuchi, T
    Ochi, H
    Kaisei, K
    Ishida, K
    Matsushige, K
    STRUCTURE-PROPERTY RELATIONSHIPS OF OXIDE SURFACES AND INTERFACES II, 2003, 751 : 145 - 148
  • [46] Analysis of the Ion Distribution at a Charged Solid-Liquid Interface Using X-ray Standing Waves
    Bruecher, Martin
    Jacob, Peter
    von Bohlen, Alex
    Franzke, Joachim
    Sternemann, Christian
    Paulus, Michael
    Hergenroeder, Roland
    LANGMUIR, 2010, 26 (02) : 959 - 966
  • [47] Initial domain structure of hydride vapor phase epitaxy GaAs/Si(001) by using x-ray standing waves
    Kawamura, T
    Takenaka, H
    Hayashi, T
    Tachikawa, M
    Mori, H
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1969 - 1971
  • [48] Influence of standing waves on impurity analysis of Si(001) wafer using commercially available total-reflection X-ray fluorescence analyzer
    Yakushiji, Kenji, 1600, (32):
  • [49] Ionic strength dependence of Zn2+ and Sr2+ ion adsorption at the rutile/aqueous interface using X-ray standing waves.
    Zhang, Z
    Cheng, LK
    Fenter, P
    Sturchio, NC
    Bedzyk, M
    Machesky, ML
    Wesolowski, DJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 222 : U423 - U423
  • [50] Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping
    Jang, Hyunchul
    Kim, Byongju
    Koo, Sangmo
    Choi, Yongjoon
    Shin, Chan-Soo
    Ko, Dae-Hong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (03)
12345