Effect of gate-oxide breakdown on RF performance

被引：53

作者：

Yang, H ^{[1
]}

Yuan, JS

Liu, Y

Xiao, EJ

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

[2] Univ Cent Florida, Orlando, FL 32816 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2003年 / 3卷 / 03期

关键词：

circuit reliability; dielectric breakdown; equivalent circuit; low-noise amplifier (LNA); RF; scattering parameters;

D O I：

10.1109/TDMR.2003.816656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of S-parameters of 0.16-mum nMOS devices due to gate-oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate-oxide breakdown is proposed. The influence of nMOSFET gate-oxide breakdown on the performance of a low-noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers break down, the circuit continues to work, despite that the performance of S-parameters and noise figure degrades significantly.

引用

页码：93 / 97

页数：5

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