Effect of gate-oxide breakdown on RF performance

被引：53
|
作者：
Yang, H [1 ]
Yuan, JS
Liu, Y
Xiao, EJ
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA
[2] Univ Cent Florida, Orlando, FL 32816 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2003年 / 3卷 / 03期
关键词：
circuit reliability; dielectric breakdown; equivalent circuit; low-noise amplifier (LNA); RF; scattering parameters;
D O I：
10.1109/TDMR.2003.816656
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation of S-parameters of 0.16-mum nMOS devices due to gate-oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate-oxide breakdown is proposed. The influence of nMOSFET gate-oxide breakdown on the performance of a low-noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers break down, the circuit continues to work, despite that the performance of S-parameters and noise figure degrades significantly.
引用
收藏
页码：93 / 97
页数：5
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