GATE-OXIDE INTEGRITY OF SILICON-ON-INSULATOR TRANSISTORS

被引：1
|
作者：
KAMINS, TI
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 04期
关键词：
BULK WAFERS - DIELECTRIC STRENGTH - GATE-OXIDE INTEGRITY - SILICON WAFER - SILICON-ON-INSULATOR TRANSISTORS;
D O I：
10.1049/el:19870124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：175 / 176
页数：2
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